Insulation method for a semiconductor device

Isolierverfahren für eine Halbleitervorrichtung

Abstract

According to a novel insulation method for a semiconductor device, after formation of a first oxide film (24) and of a silicon film (26) on a semiconductor substrate (10), an oxidation barrier film (28) is formed on the silicon film (26). Thereupon, a high-temperature thermal treatment process is carried out in a nitrogen atmosphere on the resulting structure. The oxidation barrier film (28) is selectively etched to form an opening, and a thermal oxidation process is carried out in order to form a thermal oxide film in the opening. As a result, the overlying bird's-beak between the oxide barrier film (28) and the silicon film (26) is fully suppressed, so that lasting insulation properties are ensured. <IMAGE>

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Cited By (3)

    Publication numberPublication dateAssigneeTitle
    DE-19525580-A1January 25, 1996Nippon Telegraph & TelephoneVerfahren zur Bildung eines Elementisolationsbereichs
    DE-19525580-C2December 06, 2001Nippon Telegraph & TelephoneVerfahren zur Bildung eines Elementisolationsbereichs mit einer die Kristallisation von Silizium unterdrückenden dotierten Siliziumschicht
    DE-19625404-B4December 29, 2005Hyundai Electronics Industries Co., Ltd., IchonVerfahren zur Herstellung einer Feldoxidschicht in einer Halbleitervorrichtung